NTJD2152PT1G parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

NTJD2152PT1G

Description:

MOSFET 2P-CH 8V 0.775A SOT-363

Stock:

12608

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.01

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

775mA

Drain source voltage (Vdss)

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

4nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

225pF @ 8V

On resistance (maximum) for different Ids and Vgs

300 mΩ @ 570mA,4.5V

Power - maximum

270mW

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT,bulk

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NTJD2152PT1G.pdf

NTJD2152PT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12608,Price reference "real-time change" China/Hongkong。 NTJD2152PT1G package/specs, Download NTJD2152PT1G、Datasheet。